Special Issue: Nanoscale and Ultrafast Devices
DOI: 10.1063/1.881221
This special issue explores some of the most exciting recent trends in semiconductor electron devices. These developments have been characterized by a strong interplay among three areas: the physical understanding of electronic transport, materials science techniques, particularly epitaxial growth of semiconductor thin films, and device fabrication technologies such as nanolithography. The interdependence of these factors has been the hallmark of this field since the invention of the transistor.
References
1. F. Capasso, Science 235, 172 (1987).https://doi.org/SCIEAS
More about the Authors
Federico Capasso. AT&T Bell Laboratories, Murray Hill, New Jersey.
