Laser annealing shows promise for making p‐n junctions
JUL 01, 1978
DOI: 10.1063/1.2995100
Ion implantation, a powerful technique for producing p–n junctions—the life‐blood of solid‐state electronics and photovoltaic solar cells—has run into snags, and now there is a promising new way to cut through these snags: laser annealing.
This article is only available in PDF format
© 1978 American Institute of Physics
