Glassy Semiconductors Show Switching and Memory Effects
JAN 01, 1969
DOI: 10.1063/1.3035358
Switching and memory behavior in glassy semiconductors has been reported by Stanford R. Ovshinsky (of Energy Conversion Devices, Inc., Troy, Michigan) in the 11 Nov. issue of Phys. Rev. Letters. The report made headlines in newspapers like The New York Times and The Wall Street Journal, which played up the potential commercial and military applications of Ovshinsky’s report.
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© 1969 American Institute of Physics
