Probing Semiconductors with Femtosecond Pulses
DOI: 10.1063/1.881224
In semiconductor microelectronics, small distances and high speeds are closely related. Transistors with base lengths of only a few tens of nanometers have electron transit times that can be less than 1 picosecond. Indeed, this very fact has motivated much of the intense interest in very‐small‐scale electronic devices: To make something faster, one generally must make it smaller.
References
1. C. V. Shank, in Ultrashort Light Pulses, W. Kaiser, ed., Springer‐Verlag, New York (1988), p. 5.
2. W.‐Z. Lin, R. W. Schoenlein, J. G. Fujimoto, E. P. Ippen, IEEE J. Quantum Electron. 24, 267 (1988).https://doi.org/IEJQA7
3. P. C. Becker, H. L. Fragnito, C. H. Brito Cruz, J. Shah, R. L. Fork, J. E. Cunningham, J. E. Henry, C. V. Shank, Appl. Phys. Lett. 53, 2089 (1988).https://doi.org/APPLAB
4. J. Shah, B. Deveaud, T. C. Damen, W.‐T. Tsang, A. C. Gossard and P. Lugli, Phys. Rev. Lett. 59, 222 (1987).https://doi.org/PRLTAO
5. D. H. Auston, in Ultrashort Light Pulses, W. Kaiser, ed., Springer‐Verlag, New York (1988), p. 183.
6. P. R. Smith, D. H. Auston, M. C. Nuss, IEEE J. Quantum Electron. 24, 255 (1988).https://doi.org/IEJQA7
7. J. A. Valdmanis, Electron. Lett. 23, 1308 (1987).https://doi.org/ELLEAK
8. C. J. Madden, R. A. Marsland, M. J. W. Rodwell, D. M. Bloom, Appl. Phys. Lett. 54, 1019 (1989).https://doi.org/APPLAB
9. M. C. Nuss, D. H. Auston, F. Capasso, Phys. Rev. Lett. 58, 2355 (1987).https://doi.org/PRLTAO
10. K. Meyer, M. Pessot, G. Mourou, R. Grondin, S. Chamoun, Appl. Phys. Lett. 53, 2254 (1988).https://doi.org/APPLAB
More about the Authors
David H. Auston. Columbia University.