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Probing Semiconductors with Femtosecond Pulses

FEB 01, 1990
Techniques that use laser pulses as short as three optical cycles are revealing fundamental properties of semiconductors and paving the way for new high‐speed electronic and optical devices.
David H. Auston

In semiconductor microelectronics, small distances and high speeds are closely related. Transistors with base lengths of only a few tens of nanometers have electron transit times that can be less than 1 picosecond. Indeed, this very fact has motivated much of the intense interest in very‐small‐scale electronic devices: To make something faster, one generally must make it smaller.

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References

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  2. 2. W.‐Z. Lin, R. W. Schoenlein, J. G. Fujimoto, E. P. Ippen, IEEE J. Quantum Electron. 24, 267 (1988).https://doi.org/IEJQA7

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  5. 5. D. H. Auston, in Ultrashort Light Pulses, W. Kaiser, ed., Springer‐Verlag, New York (1988), p. 183.

  6. 6. P. R. Smith, D. H. Auston, M. C. Nuss, IEEE J. Quantum Electron. 24, 255 (1988).https://doi.org/IEJQA7

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  10. 10. K. Meyer, M. Pessot, G. Mourou, R. Grondin, S. Chamoun, Appl. Phys. Lett. 53, 2254 (1988).https://doi.org/APPLAB

More about the authors

David H. Auston, Columbia University.

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This Content Appeared In
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Volume 43, Number 2

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