Laser annealing of silicon

JUN 01, 1982

Scanned and pulsed laser beams rapidly heat silicon surfaces, revealing basic mechanisms of crystallization and amorphization, while paving the way for the fabrication of novel semiconductor devices.

DOI: 10.1063/1.2915125

John M. Poate

Walter L. Brown

Silicon is one of the best understood of all materials because it lies at the heart of one of the central technologies of the twentieth century: integrated circuits. How much more can we learn about silicon and ways of handling it? Quite a lot, apparently, if the remarkable developments in laser annealing over the past five years are any indication.

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References

1. Laser–Solid Interaction and Laser Processing—1978, S. D. Ferris, H. J. Leamy, J. M. Poate, eds., AIP Conf. Proc. No. 50 (1979).
2. Laser and Electron Beam Processing of Materials, C. W. White, P. S. Peercy, eds., Academic, New York (1980).
3. Laser and Electron‐Beam Solid Interaction and Materials Processing, J. F. Gibbons, L. D. Hess, T. W. Sigmon, eds., vol. 1, Mater. Res. Soc. Symp. Proc., North Holland, New York (1981).
4. Laser and Electron Beam Interaction with Solids, B. R. Appleton, G. K. Celler, eds., vol. 4, Mater. Res. Soc. Symp. Proc., North Holland, New York (1982).
5. S. A. Kokorowski, G. I. Olson, J. A. Roth, L. D. Hess, Phys. Rev. Let. 48, 498 (1982).https://doi.org/PRLTAO
6. G. L. Galvin, M. O. Thompson, J. W. Mayer, R. B. Hammond, P. S. Percy, Phys. Rev. Lett. 48, 33 (1982).https://doi.org/PRLTAO
7. C. W. White, S. R. Wilson, B. R. Appleton, F. W. YoungJr, J. Appl. Phys. 51, 738 (1980).https://doi.org/JAPIAU
8. J. M. Poate, in ref. 4.
9. J. W. Cahn, S. R. Coriell, W. J. Boettinger, in ref. 2, page 89.
10. J. Narayan in Inst. Phys. Conf. Series, No. 60, Microscopy of Semiconducting Materials 1981, A. G. Cullis, D. C. Joy, eds., IOP, London (1981). Page 101.
11. A. G. Cullis, D. T. J. Hurle, H. C. Webber, N. G. Chew, J. M. Poate, P. Baeri, G. Foti, Appl. Phys. Lett. 38, 642 (1981).https://doi.org/APPLAB
12. B. G. Bagley, H. S. Chen, in ref. 1, page 97;
F. Spaepen, D. Turnbull, in ref. 1, page 73.
13. P. Baeri, G. Foti, J. M. Poate, A. G. Cullis, Phys. Rev. Lett. 45, 2036 (1980); https://doi.org/PRLTAO
E. P. Donovan, F. Spaepen, D. Turnbull, J. M. Poate, D. C. Jacobson, submitted to Phys. Rev. Lett.
14. P. L. Liu, R. Yen, N. Bloembergen, R. T. Hodgson, Appl. Phys. Lett. 34, 864 (1979); https://doi.org/APPLAB
R. Tsu, R. T. Hodgson, T. Y. Tan, J. E. E. Baglin, Phys. Rev. Letter. 42, 1356 (1979).
15. A. Gat, L. Gerzberg, J. F. Gibbons, T. J. Magee, J. Peng, J. D. Hong, Appl. Phys. Lett. 33, 775 (1978).https://doi.org/APPLAB
16. D. K. Biegelsen, N. M. Johnson, D. J. Bartelink, M. D. Moyer, in ref 3, page 487.
17. J. C. C. Fan, M. W. Geis, B.‐Y. Tsaur, Appl. Phys. Lett. 38, 365 (1981).https://doi.org/APPLAB
18. J. A. Van Vechten, in ref. 2, page 53.
19. D. H. Auston, J. A. Golovchenko, A. L. Simons, R. E. Slusher, P. R. Smith, C. M. Surko, T. N. C. Venkatesan, in ref. 1, page 11.
20. A. Compaan, H. W. Lo, A. Aydinli, M. C. Lee, in ref. 3, page 15;
H. W. Lo, A. Compaan, Phys. Rev. Lett. 44, 1605 (1980); https://doi.org/PRLTAO
A. Aydinli, H. W. Lo, M. C. Lee, A. Compaan, Phys. Rev. Lett., 46, 1640 (1981).https://doi.org/PRLTAO
21. B. C. Larson, C. W. White, T. S. Noggle, D. Mills, Phys. Rev. Lett. (1982), in press.
22. B. Stritzker, A. Pospieszczyk, J. A. Tagle, Phys. Rev. Lett. 47, 356 (1981).https://doi.org/PRLTAO
23. J. M. Liu, R. Yen, H. Kurz, N. Bloembergen, Appl. Phys. Lett. 39, 755 (1981); https://doi.org/APPLAB
N. Bloembergen, H. Kurz, J. M. Liu, R. Yen, in ref. 4.
24. A. Compaan, A. Aydinli, H. W. Lo, H. C. Lee, in ref. 4.

More about the authors

John M. Poate, Bell Laboratories, Murray Hill, New Jersey.

Walter L. Brown, Bell Laboratories, Murray Hill, New Jersey.