Low‐Energy Electron Beams Modify Semiconductor Surfaces
APR 01, 1999
Recent experiments suggest that electron beams could be used to pattern semiconductor chips.
DOI: 10.1063/1.882623
It is a truth universally acknowledged—at least in quantum mechanics—that you can’t observe something without changing it. But, until recently, it’s been widely assumed that the low‐energy electron beams that form the basis of low‐energy electron diffraction (LEED) and Auger electron spectroscopy (AES) do not significantly alter clean semiconductor surfaces.
This article is only available in PDF format
© 1999 American Institute of Physics
