GaN Laser Diode Brightens Hopes for a Long‐Lived, Short‐Wavelength Device
APR 01, 1996
In the race to produce a short‐wavelength semiconductor laser, diode lasers based on gallium nitride were late leaving the starting gate, but they have the potential to challenge the current leader.
DOI: 10.1063/1.2807576
Researchers at Nichia Chemical Industries in Tbkushima, Japan, reported in January that they had succeeded in getting a diode based on gallium nitride to lase at a wavelength of 417 nanometers, giving forth a blueviolet light. (See the figure on page 19.) Since then, at the International Symposium on Blue Lasers and Light‐Emitting Diodes held in Chiba, Japan, last month, a team from Meijo University in Nagoya announced GaN‐based diode lasers operating both in the blue (402 nm) and ultraviolet (376 nm).
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© 1996 American Institute of Physics
