Fert and Gruenberg win physics Nobel for giant magnetoresistance research (updated)

OCT 10, 2007

Physics Today

Albert Fert of the Université Paris-Sud, Orsay, France and Peter Grünberg of the Forschungszentrum Jülich, Germany have won the 2007 Nobel Prize in physics for the discovery of giant magnetoresistance, or GMR for short. GMR is the process whereby a weak magnetic field, such as that of an oriented domain on the surface of a computer hard drive can, when the proper read head is brought nearby, trigger a large change in electrical resistance, thus “reading” the data vested in the magnetic orientation. This is the heart of modern hard drive technology and makes possible the immense hard-drive data storage industry. Earlier this year the two physicists won the Wolf Prize for the same research.

Fert and Gruenberg helped pioneer the making of semiconductor stacks consisting of alternating thin layers of magnetic and non-magnetic atoms needed to produce the GMR effect. GMR is a prominent example of how quantum effects (a large electrical response to a tiny magnetic input) come about through confinement (the atomic layers being so thin.); that is, atoms interact differently with each other when they are confined to a tiny volume or a thin plane.All these magnetic interactions involve the spin of an electron. Spin is a quantum attribute that shouldn’t be associated too closely in the mind with the electron literally spinning (in the way that a top spins). Still more innovative technology can be expected through quantum effects depending on electrons’ spin. Most of the electronics industry is based on manipulating the charges of electrons moving through circuits. But the electrons’ spins might also be exploited to gain new control over data storage and manipulation. Spintronics is the general name for this branch of electronics.

Related Physics Today articles
Layered Magnetic Structures: History, Highlights, Applications , May 2001, page 31
Basic Research in the Information Technology Industry , Jul 2003
Magnetic Semiconductors Enable Efficient Electrical Spin Injection , April 2000, page 21
Physics Today, April 1995 (available November 1)

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