2D tin oxide semiconductor developed for use in transistors
DOI: 10.1063/PT.5.029586
IEEE Spectrum : The development of two-dimensional alternatives for silicon transistors has been held up because all the 2D semiconductors to date have been n-type, electron-carrying materials. A p-type (positive charge–carrying) material is also required. Now researchers have used laser deposition to mate a 2D tin oxide layer with a sapphire and silicon dioxide substrate to achieve the first stable p-type semiconductor. With the new material, the scientists fabricated several field-effect transistors. The next step will be to use the new p-type semiconductor to build a complementary metal oxide semiconductor. Ultimately, researchers hope to create 2D semiconductors that transport electricity and heat more efficiently than does silicon.
