/
Article

VLSI Technology and Dielectric Film Science

OCT 01, 1986
The oxide of silicon is mechanically stable, electrically insulating and chemically protective; it forms an integral part of nearly every integrated circuit, but we still need to determine many details about its structure and properties.
Frank J. Feigl

An important reason for the dominance of crystal silicon in electronics is the quality of its natural oxide. Silicon dioxide forms a glass film on the crystal, with an atomically abrupt interface between them. At the ordinary operating temperatures of the devices, it is mechanically stable, electrically insulating and chemically protective. Germanium and gallium arsenide, materials whose inherent electrical properties are superior to those of silicon, are at a disadvantage because of the inferior properties of their oxides: Germanium dioxide is water soluble, and the oxidation of gallium arsenide produces metallic precipitates.

This article is only available in PDF format

References

  1. 1. F. J. Feigl, in Materials and Process Characterization, vol. 6 of VLSI Electronics: Microstructure Science, N. Einspruch, G. Larrabee, eds., Academic, New York (1983), p. 147. This review contains references to work described in this article.

  2. 2. O. J. Krivanek, D. C. Tsui, T. T. Sheng, A. Kramgar, in The Physics of SiO2 and Its Interfaces, S. T. Pantelides, ed., Pergamon, New York (1978), p. 356.

  3. 3. W.‐K. Chu, J. M. Mayer, M.‐A. Nicolet, Backscattering Spectrometry, Academic, New York (1978), p. 243.

  4. 4. A. Ourmazd, J. C. Bean, J. C. Phillips, Phys. Rev. Lett. 55, 1599 (1985). https://doi.org/PRLTAO
    J. C. Phillips, Solid State Phys. 37, 93 (1982).https://doi.org/SSPHAE

  5. 5. F. Galeener, A. C. Wright, Solid State Commun. 57, 677 (1986).https://doi.org/SSCOA4

  6. 6. S. T. Pantelides, M. Long, in The Physics of SiO2 and Its Interfaces, S. T. Pantelides, ed., Pergamon, New York (1978), p. 339.

  7. 7. P. J. Grunthaner, M. H. Hecht, F. J. Grunthaner, N. M. Johnson, to be published in J. Appl. Phys.
    An important early reference is F. J. Grunthaner, P. J. Grunthaner, R. P. Vasquez, B. F. Lewis, J. Maserjian, A. Madhukar, Phys. Rev. Lett. 43, 1638 (1979).https://doi.org/PRLTAO

  8. 8. G. Hollinger, F. J. Himpsel, Appl. Phys. Lett. 44, 93 (1984).https://doi.org/APPLAB

  9. 9. D. J. DiMaria, M. V. Fischetti, E. Tierney, S. D. Brorson, Phys. Rev. Lett. 56, 1284 (1986).https://doi.org/PRLTAO

  10. 10. M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).https://doi.org/PRBMDO

  11. 11. J. R. Davis, Instabilities in MOS Devices, Gordon and Breach, New York (1981).

  12. 12. E. H. Nicollian, J. R. Brews, MOS Physics and Technology, Wiley, New York (1982).

  13. 13. E. H. Poindexter, P. J. Caplan, Prog. Surf. Sci. 14, 201 (1983).

More about the authors

Frank J. Feigl, Lehigh University, Bethlehem, Pennsylvania.

Related content
/
Article
Since 2008, more than 100 colleges and universities in the US have stopped offering an undergraduate physics major. What happened?
/
Article
The thermodynamic and quantum mechanical properties of topological insulators provide a path toward scalable energy storage in information-based batteries.
/
Article
At the end of the turbulent 1960s, the postwar funding boom in US physics came to a crashing halt. The lessons learned then may be helpful to today’s physicists.
/
Article
Interviews with 22 successful early-career physical scientists and engineers reveal that networking has been one of the most critical ways to nurture their careers.
This Content Appeared In
pt-cover_1986_10.jpeg

Volume 39, Number 10

Get PT newsletters in your inbox

pt_newsletter_card_blue.png
PT The Week in Physics

A collection of PT's content from the previous week delivered every Monday.

pt_newsletter_card_darkblue.png
PT New Issue Alert

Be notified about the new issue with links to highlights and the full TOC.

pt_newsletter_card_pink.png
PT Webinars & White Papers

The latest webinars, white papers and other informational resources.

By signing up you agree to allow AIP to send you email newsletters. You further agree to our privacy policy and terms of service.