VLSI Technology and Dielectric Film Science

OCT 01, 1986

The oxide of silicon is mechanically stable, electrically insulating and chemically protective; it forms an integral part of nearly every integrated circuit, but we still need to determine many details about its structure and properties.

DOI: 10.1063/1.881068

Frank J. Feigl

An important reason for the dominance of crystal silicon in electronics is the quality of its natural oxide. Silicon dioxide forms a glass film on the crystal, with an atomically abrupt interface between them. At the ordinary operating temperatures of the devices, it is mechanically stable, electrically insulating and chemically protective. Germanium and gallium arsenide, materials whose inherent electrical properties are superior to those of silicon, are at a disadvantage because of the inferior properties of their oxides: Germanium dioxide is water soluble, and the oxidation of gallium arsenide produces metallic precipitates.

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References

1. F. J. Feigl, in Materials and Process Characterization, vol. 6 of VLSI Electronics: Microstructure Science, N. Einspruch, G. Larrabee, eds., Academic, New York (1983), p. 147. This review contains references to work described in this article.
2. O. J. Krivanek, D. C. Tsui, T. T. Sheng, A. Kramgar, in The Physics of SiO2 and Its Interfaces, S. T. Pantelides, ed., Pergamon, New York (1978), p. 356.
3. W.‐K. Chu, J. M. Mayer, M.‐A. Nicolet, Backscattering Spectrometry, Academic, New York (1978), p. 243.
4. A. Ourmazd, J. C. Bean, J. C. Phillips, Phys. Rev. Lett. 55, 1599 (1985). https://doi.org/PRLTAO
J. C. Phillips, Solid State Phys. 37, 93 (1982).https://doi.org/SSPHAE
5. F. Galeener, A. C. Wright, Solid State Commun. 57, 677 (1986).https://doi.org/SSCOA4
6. S. T. Pantelides, M. Long, in The Physics of SiO2 and Its Interfaces, S. T. Pantelides, ed., Pergamon, New York (1978), p. 339.
7. P. J. Grunthaner, M. H. Hecht, F. J. Grunthaner, N. M. Johnson, to be published in J. Appl. Phys.
An important early reference is F. J. Grunthaner, P. J. Grunthaner, R. P. Vasquez, B. F. Lewis, J. Maserjian, A. Madhukar, Phys. Rev. Lett. 43, 1638 (1979).https://doi.org/PRLTAO
8. G. Hollinger, F. J. Himpsel, Appl. Phys. Lett. 44, 93 (1984).https://doi.org/APPLAB
9. D. J. DiMaria, M. V. Fischetti, E. Tierney, S. D. Brorson, Phys. Rev. Lett. 56, 1284 (1986).https://doi.org/PRLTAO
10. M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).https://doi.org/PRBMDO
11. J. R. Davis, Instabilities in MOS Devices, Gordon and Breach, New York (1981).
12. E. H. Nicollian, J. R. Brews, MOS Physics and Technology, Wiley, New York (1982).
13. E. H. Poindexter, P. J. Caplan, Prog. Surf. Sci. 14, 201 (1983).

More about the authors

Frank J. Feigl, Lehigh University, Bethlehem, Pennsylvania.