Ultrahigh‐Speed Bipolar Transistors
DOI: 10.1063/1.881225
The invention of the transistor in the late 1940s has had tremendous technological ramifications, heralding as it did an era of semiconductor microelectronics. At the heart of the transistor’s device applications are its ability to amplify and the ease with which it can be fabricated in very complex integrated circuits.
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More about the authors
A. F. J. Levi, AT&T Bell Laboratories, Murray Hill, New lersey.
R. N. Nottenburg, AT&T Bell Laboratories, Murray Hill, New lersey.
Y. K. Chen, AT&T Bell Laboratories, Murray Hill, New lersey.
M. B. Panish, AT&T Bell Laboratories, Murray Hill, New lersey.
