Ultrahigh‐Speed Bipolar Transistors

FEB 01, 1990

Understanding nonequilibrium electron transport in III–V compound semiconductors has helped in the development of the fastest bipolar transistors.

DOI: 10.1063/1.881225

A. F. J. Levi

R. N. Nottenburg

Y. K. Chen

M. B. Panish

The invention of the transistor in the late 1940s has had tremendous technological ramifications, heralding as it did an era of semiconductor microelectronics. At the heart of the transistor’s device applications are its ability to amplify and the ease with which it can be fabricated in very complex integrated circuits.

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More about the authors

A. F. J. Levi, AT&T Bell Laboratories, Murray Hill, New lersey.

R. N. Nottenburg, AT&T Bell Laboratories, Murray Hill, New lersey.

Y. K. Chen, AT&T Bell Laboratories, Murray Hill, New lersey.

M. B. Panish, AT&T Bell Laboratories, Murray Hill, New lersey.