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Article

Research on Silicon and Germanium in World War II

JAN 01, 1995
The down of the oge of silicon electronics occurred during the war when point‐contact silicon rectifiers became standard nonlinear elements in microwave radar circuits.
Frederick Seitz

A relatively large and well‐funded group of investigators did intense research on the electrical properties of silicon and germanium during World War II. Their work completely transformed attitudes toward the physical properties of the pure crystalline forms of the semiconductors: No longer regarded merely as exotic materials, these elements became components of flexibly useful circuit elements that could be manipulated to show various properties by the addition of small amounts of other elements. In this sense, the wartime research laid the groundwork for the invention of the transistor shortly after the war and ultimately the development of the integrated circuit. The work opened up a now age of electronics.

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More about the authors

Frederick Seitz, Rockefeller University, New York City.

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This Content Appeared In
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Volume 48, Number 1

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