Quantum Electron Devices

FEB 01, 1990

When semiconductor devices become small enough, inescapable quantum effects open a whole new range of possibilities for electronic manipulation.

DOI: 10.1063/1.881226

Federico Capasso

Supriyo Datta

Much of our understanding of electron transport in solids is based on the semiclassical picture that views electrons as particles obeying Newtonian mechanics in an external field and occasionally scattered by phonons and impurities. Quantum effects such as size quantization and tunneling, however, cannot be understood within this conceptual framework.

This article is only available in PDF format

References

1. F. Capasso, ed., Physics of Quantum Electron Devices, Springer‐Verlag, New York (1990).
2. L. L. Chang, L. Esaki, R. Tsu, Appl. Phys. Lett. 24, 593 (1974). https://doi.org/APPLAB
For a review, see F. Capasso, K. Mohammed, A. Y. Cho, IEEE J. Quantum Electron. 22, 1853 (1986). https://doi.org/IEJQA7
A lucid discussion of negative differential resitance in resonant‐tunneling double barriers is given by S. Luryi, Appl. Phys. Lett. 47, 490 (1985).https://doi.org/APPLAB
3. A. D. Stone, P. A. Lee, Phys. Rev. Lett. 54, 1196 (1985). https://doi.org/PRLTAO
N. S. Wingreen, K. W. Jacobsen, J. W. Wilkins, Phys. Rev. Lett. 61, 1396 (1988). https://doi.org/PRLTAO
T. Weil, B. Vinter, Appl. Phys. Lett. 50, 1281 (1987).https://doi.org/APPLAB
4. T. P. E. Broekaert, W. Lee, C. G. Fonstadt, Appl. Phys. Lett. 53, 1545 (1988).https://doi.org/APPLAB
5. S. Sen, F. Capasso, A. C. Gossard, R. A. Spah, A. L. Hutchinson, S. N. G. Chu, Appl. Phys. Lett. 51, 1428 (1987).https://doi.org/APPLAB
6. A. Zaslavsky, V. J. Goldman, D. C. Tsui, J. E. Cunningham, Appl. Phys. Lett. 53, 1408 (1988). https://doi.org/APPLAB
E. S. Alves, L. Eaves, M. Henini, O. H. Hughes, M. L. Leadbeater, F. W. Sheard, G. A. Toombs, Electron. Lett. 24, 1190 (1988).https://doi.org/ELLEAK
7. M. Tsuchiya, T. Matsusue, H. Sakaki, Phys. Rev. Lett. 59, 2356 (1987).https://doi.org/PRLTAO
8. T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, D. D. Peck, Appl. Phys. Lett. 43, 588 (1983). https://doi.org/APPLAB
E. R. Brown, T. C. L. G. Sollner, C. D. Parker, W. D. Goodhue, C. L. Chen, Appl. Phys. Lett. 55, 1777 (1989).https://doi.org/APPLAB
9. J. F. Whittaker, G. A. Mourou, T. C. L. G. Sollner, W. D. Goodhue, Appl. Phys. Lett. 53, 385 (1989).https://doi.org/APPLAB
10. K. L. Lear, K. Voh, J. S. Harris Jr., Inst. Phys. Conf., Ser. No. 96, 593 (1989).
11. F. Capasso, R. A. Kiehl, J. Appl. Phys. 58, 1366 (1985); https://doi.org/JAPIAU
For a recent review of resonant‐tunneling transistors and circuits, see F. Capasso, S. Sen, F. Beltram, L. Lunadri, A. Vengurlekar, P. R. Smith, N. J. Shah, R. Malik, A. Y. Cho, IEEE Trans. Electron Devices 36, 2065 (1989).https://doi.org/IETDAI
12. N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu, H. Nishi, Jpn. J. Appl. Phys. L83, 24 (1985).
A. R. Bonnefoi, D. H. Chow, T. C. Mcgill, Appl. Phys. Lett. 47, 888 (1985). https://doi.org/APPLAB
F. Beltram, F. Capasso, S. Luryi, S. G. Chu, A. Y. Cho, D. L. Sivco, Appl. Phys. Lett. 53, 219 (1988).https://doi.org/APPLAB
13. L. Esaki, R. Tsu, IBM J. Res. Dev. 14, 61 (1970). https://doi.org/IBMJAE
G. Bernstein, D. K. Ferry, Z. Phys. B 67, 449 (1987). https://doi.org/ZPCMDN
G. Dohler, R. Tsu, L. Esaki, Solid State Commun. 17, 317 (1975). https://doi.org/SSCOA4
E. E. Mendez, F. Agullo‐Rueda, J. M. Hong, Phys. Rev. Lett. 60, 2426 (1989).https://doi.org/PRLTAO
14. B. F. Levine, C. G. Bethea, G. Hasnain, J. Walker, R. J. Malik, Electron. Lett. 24, 747 (1988). https://doi.org/ELLEAK
L. Esaki, H. Sakaki, IBM Tech. Disclosure Bull. 20, 2456 (1977).https://doi.org/IBMTAA
15. G. Timp, A. M. Chang, P. Mankiewich, R. Behringer, J. E. Cunningham, T. Y. Chang, R. E. Howard, Phys. Rev. Lett. 59, 732 (1987). https://doi.org/PRLTAO
M. L. Roukes, A. Scherer, S. J. Allen, H. G. Craighead, R. M. Ruthen, E. D. Beebe, J. P. Harbison, Phys. Rev. Lett. 59, 3011 (1987). https://doi.org/PRLTAO
B. J. Van Wees, H. Van Houten, C. W. J. Beenakker, J. G. Williamson, L. P. Kouwenhoven, D. Van der Marel, C. T. Foxon, Phys. Rev. Lett. 60, 848 (1988). https://doi.org/PRLTAO
D. A. Wharam, T. J. Thornton, R. Newbury, M. Pepper, H. Ahmed, J. E. F. Frost, D. G. Hasko, D. C. Peacock, D. A. Ritchie, G. A. C. Jones, J. Phys. C 21, L209 (1988).https://doi.org/JPSOAW
16. A. B. Fowler, U S Patent 45503320 (1985).
S. Datta et al., Phys. Rev. Lett. 55, 2344 (1985); https://doi.org/PRLTAO
S. Datta et al., Appl. Phys. Lett. 48, 487 (1986).https://doi.org/APPLAB
17. S. Datta, in Proc. Fourth Int. Conf. on Superlattices, Microstructures and Microdevices, Trieste 1988, published in Superlattices ad Microstruct. 6, 83 (1989). https://doi.org/SUMIEK
D. C. Miller, R. K. Lake, S. Datta, M. S. Lundstrom, M. R. Melloch, R. Reifenberger, in Proc. Int. Symp. on Nanostructure Physics and Fabrication, W. P. Kirk, M. A. Reed, eds., Academic, San Diego (1989).
F. Solo, M. Macucci, U. Ravaioli, K. Hess, Appl. Phys. Lett. 54, 350 (1989).https://doi.org/APPLAB

More about the Authors

Federico Capasso. AT&T Bell Laboratories, Murray Hill, New Jersey.

Supriyo Datta. Purdue University, West Lafayette, Indiana.