Hot electrons in layered semiconductors

OCT 01, 1980

The size of semiconductor devices has decreased so much that classical treatments of semiconductor physics become invalid and effects involving supra‐thermal electrons take on a new importance

DOI: 10.1063/1.2913789

Physics Today

As electronic systems—and especially computers—are used more and more widely in almost all areas of endeavor and daily life, the semiconductor technology on which they are based is being pushed to ever larger‐scale integration and ever greater miniaturization. As the devices get smaller, and smaller, new problems (and maybe new opportunities) appear.¹

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References

1. See, for example, the papers of K. Hess, D. K. Ferry and J. R. Barker in Physics of Nonlinear Transport in Semiconductors, D. K. Ferry, J. R. Barker and C. Jacoboni, eds., Plenum, New York (1980).
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4. See K. Hess, in reference 1.
5. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York (1969).
6. This effect was first proposed by John Bardeen and J. R. Schrieffer (Phys. Rev. 97, 641 (1955))
for MOS transistors and later investigated in detail by F. Stern, Phys. Rev. B 5, 4891 (1972).
7. L. Esaki, R. Tsu, IBM Research Report No. RC‐2418, 1969.
See also PHYSICS TODAY April 1979, page 20;
R. Dingle, H. L. Stormer, A. C. Gossard, W. Wiegmann, Appl. Phys. Lett. 3, 665 (1978).https://doi.org/APPLAB
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(R. M. Kolbas, N. HolonyakJr., R. D. Dupuis, P. D. Dapkus, Sov. Tech. Phys. Lett. 4, (1978).
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14. PHYSICS TODAY, April 1979, page 20.
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