AVS awards to be handed out

Work ranging from characterizing thin films and interfaces to supporting vacuum standards development and research to developing silicon-based molecular electronics will be honored next month at AVS’s annual meeting, held this year in San Francisco. AVS: Science and Technology of Materials, Interfaces, and Processing will hand out five awards in recognition of recipients’ achievements.

John C. Hemminger, dean of the school of physical sciences and professor of chemistry at the University of California, Irvine, will receive the Medard W. Welch Award “for outstanding contributions to the development of quantitative, molecular level understanding of many important interfacial processes, especially those related to atmospheric chemistry.”

The Gaede–Langmuir Award will go to Leonard J. Brillson “for demonstration of the fundamental importance of semiconductor interfacial bonding, metallurgical reactions, and defect formation upon solid state material and device properties.” Brillson is a professor of electrical and computer engineering, a professor of physics, and a Center for Materials Research Scholar at Ohio State University.

Siegfried Hofmann will receive the Albert Nerken Award “for seminal contributions to the quantitative characterization of thin films and interfaces, particularly planar nanostructures, by sputter depth profiling.” Hofmann is a staff scientist at the Max Planck Institute for Metals Research in Stuttgart, Germany.

The Peter Mark Memorial Award will go to Mark C. Hersam “for outstanding contributions to the development of silicon-based molecular electronics.” Hersam is an assistant professor in the department of materials science and engineering at Northwestern University in Evanston, Illinois.

Jeffrey D. Kelley, an engineering and mechanical technician at NIST in Gaithersburg, Maryland, will receive the George T. Hanyo Award “for outstanding performance in technical support of vacuum standards development and research in the pressure and vacuum group at the National Institute of Standards and Technology.”