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The Growth of Novel Silicon Materials

OCT 01, 1986
Epitaxial growth of germanium‐silicon alloys or metal silicides on silicon produces structures that can be used in high‐performance optical and electronic devices.
John C. Bean

In the industrialized world, we are seldom more than a few meters from a crystal of silicon. One crystal may be strapped to our wrist, in an electronic watch; others may be buried within a nearby calculator, video recorder or auto ignition system—indeed, one may even be lurking in the quartz movement of a new “antique” clock. These crystals are extraordinarily perfect: No more than than one atom in 1013 is out of a proper lattice site, and the total impurity concentration may be less than 0.1 parts per billion. Yet a microprocessor or a megabit memory can be fabricated in a crystal of silicon costing only 15–20 cents

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References

  1. 1. For a recent collection of research papers see J. C. Bean, ed., Proc. First Int. Symp. on Silicon Molecular Beam Epitaxy, Proc. Vol. PV 85‐7, Electrochem. Soc. Press, Pennington, N.J. (1985).

  2. 2. E. Kasper, J. C. Bean, eds., Silicon Molecular Beam Epitaxy, CRC, Boca Raton, Fla., in press.

  3. 3. J. C. Bean, Science 230, 127 (1985), and references therein.https://doi.org/SCIEAS

  4. 4. H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett., in press.

  5. 5. For a recent review, see R. T. Tung, A. F. J. Levi, J. M. Gibson, J. Vac. Sci. Technol., in press.

  6. 6. D. B. Cherns, G. R. Anstis, J. L. Hutchinson, J. C. H. Spence, Philos. Mag. A46, 849 (1982).

  7. 7. R. T. Tung, Phys. Rev. Lett. 52, 461 (1984).https://doi.org/PRLTAO

  8. 8. R. J. Hauenstein, T. E. Schlesinger, T. C. McGill, D. B. Hunt, L. J. Schowalter, Appl. Phys. Lett. 47, 853 (1985).https://doi.org/APPLAB

  9. 9. E. Rosencher, S. Delage, Y. Campidelli, F. Arnaud d’Avitaya, Electron. Lett. 20, 762 (1984).https://doi.org/ELLEAK

  10. 10. J. C. Hensel, A. F. J. Levi, R. T. Tung, J. M. Gibson, Appl. Phys. Lett. 47, 151 (1985).https://doi.org/APPLAB

More about the authors

John C. Bean, AT&T Bell Laboratories, Murray Hill, New Jersey.

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This Content Appeared In
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Volume 39, Number 10

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