Quantum Cascade Lasers
DOI: 10.1063/1.1485582
Semiconductor lasers are an important light source for fiber-optic communications and are key components of such common appliances as compact disc players, supermarket scanners, laser printers, fax machines, and laser pointers. The lasers in these applications are so-called double heterostructure lasers, essentially diodes consisting of an active semiconductor region sandwiched between doped semiconductor cladding layers, one n-type, the other p-type. The cladding regions supply electrons and holes to the active region when an appropriate bias voltage is applied. They also have a higher bandgap and a lower refractive index than the active layer, so that the injected electrons and holes as well as the photons generated by their annihilation are confined to the active region. The share of the 2000 Nobel Prize in Physics awarded to Zhores Alferov and Herbert Kroemer for their role in developing the double heterostructure laser recognized the major impact of this device (see Physics Today, December 2000, page 17
Double heterostructure lasers have demonstrated high performance and have been successfully commercialized for wavelengths ranging from blue to the near infrared (IR), up to about 1.6 μm. Unfortunately, few semiconductor materials emitting in the mid-IR (2–20 μm) are reliable, easily processed, and insensitive to temperature cycling—the repeated heating and cooling associated with laser operation.
The scientifically and technologically interesting mid-IR, often called the molecular-fingerprint region, is the part of the spectrum where gases and vapors have telltale absorption features associated with vibrorotational transitions—that is, those in which the vibrational and, generally, rotational quantum numbers change. These features can be mapped by a number of spectroscopic techniques in a wide range of industrial, military, and scientific applications. We discuss some applications later in this article.
Semiconductor diode lasers made of lead salts and emitting in the mid-IR have been commercially available for twenty years or more. Lead-salt lasers, however, have limited power (at most a few milliwatts of peak and continuous wave power), have a small continuous single-mode tuning range, and have yet to operate at room temperature. 1 They also suffer from spectral degradation and reliability problems associated with thermal cycling.
In 1971, Rudolf Kazarinov and Robert Suris of the Ioffe Physico-Technical Institute in St. Petersburg, Russia, proposed that optical amplification could occur between the quantized electronic states of a multiple quantum-well structure under a high electric field.
2
In the late 1970s, scientists at Bell Labs began a 15-year research effort that concentrated on designing and growing artificially structured semiconductor materials and devices of ever increasing complexity and functionality.
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(See the article “Quantum Electron Devices,” by Federico Capasso and Supriyo Datta, Physics Today, February 1990, page 74
The QC laser is a light source that fills the increasing need for compact and high-performance mid-IR semiconductor lasers. 5,6 It is a high-power laser, radically different from double heterostructure lasers, and can be designed to emit essentially any wavelength in the mid-IR spectrum, extending into the far IR. 5,6 QC lasers in pulsed operation at room temperature generate peak optical powers of up to hundreds of milliwatts concentrated in a single laser mode, and they can be continuously tuned over a significant wavelength range. Recently, continuous wave (cw) operation at room temperature has been reported. 7 Less than a decade after their invention, QC lasers greatly outperform mid-IR diode lasers and are commercially available. 8 They have been successfully used in trace gas analysis with a sensitivity of parts per billion in volume. 5,6,8,9 Portable QC-laser-based sensors are opening up new market opportunities. 8
Band-structure engineering
In lasers, the chemical composition of the active material determines the energy levels between which laser action occurs. This simple but important point is reflected in conventional semiconductor lasers in that substantially changing the emitted wavelength requires selecting other active-region materials with different bandgaps. QC lasers are fundamentally different from conventional lasers in that their wavelengths can be programmed over an unprecedented range by choosing the thickness of the materials in the active region: The composition of those materials needn’t change at all. For example, QC lasers using active-region layers of the semiconductor alloys aluminum indium arsenide and gallium indium arsenide, lattice matched to an indium phosphide substrate and having suitably designed thicknesses, have demonstrated emission wavelengths ranging from 4 to 24 μm. 4–6
To understand how thickness can determine wavelength, note that in QC lasers the optical transition does not occur across the bandgap as it does for double heterostructure lasers but, rather, occurs between discrete electronic states within the conduction band. These states arise from the quantization of electron motion in the active region’s nanometer-thick layers. To good approximation, electrons move freely in the direction parallel to these layers: Discrete energy levels arise from quantizing electron motion in the normal direction. The layers are called quantum wells by analogy to the potential wells posited in the well-known particle-in-a-box problem of introductory quantum mechanics. In particular, in both cases, the energy levels depend on the width of the well. The energy levels for a quantum well structure can be obtained by numerically solving the Schrödinger equation. By adjusting the width and shape of the quantum wells, one can design an energy-level difference that leads to a desired emitted wavelength. Likewise, one can maximize the matrix element of the optical transition and optimize the lifetimes of the quantum-well states to achieve the population inversion required for laser action.
Designing QC lasers is therefore a sophisticated exercise in band-structure engineering. Fabricating QC lasers requires molecular beam epitaxy, a crystal growth technique capable of depositing thin films down to a thickness of one molecular layer. Band-structure engineering combined with molecular beam epitaxy has played a key role in the invention and development of many modern semiconductor devices and materials with tunable electronic and optical properties. 3
In QC lasers, an electron remains in the conduction band after emitting a laser photon. The electron can therefore easily be recycled by being injected into an adjacent identical active region, where it emits another photon, and so forth. To achieve this cascading emission of photons, active regions are alternated with doped electron injectors and an appropriate bias voltage is applied. The active-region-injector stages of the QC laser give rise to an energy staircase in which photons are emitted at each of the steps. The number of stages typically ranges from 20 to 35 for lasers designed to emit in the 4–8 μm range, but working lasers can have as few as one or as many as 100 stages. 6 The cascade effect is responsible for the very high power that QC lasers can attain. Lasers emitting at wavelengths from 5 to 12 μm have generated up to 1 W in pulsed mode at room temperature. Similar power levels are obtained at the same wavelengths for cw operation at liquid-nitrogen temperature.
Figure 1(a) shows a micrograph of a cross section of a QC laser, displaying several stages of active and injector layers. Figure

Quantum Cascade LASER. (a) High-resolution transmission electron microscope image of the layered structure at the heart of a quantum cascade laser. The laser core was grown by molecular beam epitaxy and designed to emit at a wavelength of about 4.65 μm. Shown are several of the laser’s 25 identical stages, each consisting of an active region and an electron injector. The white layers in the active region are the quantum wells, made of Ga0.38In0.62As. The wells are separated by darker barrier layers made of Al0.6In0.4As. The emitted wavelength is primarily determined by the thickness of the two wide quantum wells (4.4 and 4.8 nm) in the active regions. (Image courtesy of S. N. George Chu of Agere Systems.) (b) Electron microscope image of a portion of the same laser. Optical lithography and wet etching are used to fabricate the laser in the standard rectangular mesa waveguide configuration. The 25-stage waveguide core is sandwiched between cladding regions of lower refractive index, which guide the light along a “laser bar” parallel to the core layers. Shown at one end of the waveguide is one of the two laser facets. The facets are cleaved normal to the laser bar. A voltage is applied across the device so that electrons flow from top to bottom through the stacks of active regions and injectors. Pictured is the top metallic contact, which stops short of the laser facet. A diffraction grating, etched on top of the mesa, selects a single laser wavelength from among those emitted in the active region. This laser is 8 μm wide and 2.5 mm long; typical QC lasers are 5–20 μm wide and 1–3 mm long.

Quantum-Well Active Regions
The illustration below is an energy diagram showing two stages of the quantum cascade (QC) laser from figure
The electron injectors are composed of quantum wells coupled by very thin barriers. As a result of this superlattice structure, electronic states extend over many layers and form narrow energy minibands, separated by minigaps (≥ 100 meV wide) with a negligible density of states. The number of states in the miniband is equal to the number of quantum wells. The superlattice states are broadened by scattering processes and interface roughness.
An electric field of 70 kV/cm applied across the laser is manifest in the sloped energy diagram. The field is necessary to inject electrons from the miniband’s ground state g into the upper state of the laser transition—level 3 of the active region. The thinnest well in the active region enhances tunneling of the electrons from the injector into the upper state. The alloy composition of the active-region wells and barriers ensures that electrons in level 3 are not thermally excited out of the well: Suppressing thermal escape from the well is important for achieving high optical power at room temperature.
The 278-meV laser transition, symbolized by the wavy arrows, is from level 3 to level 2 in the active region. For laser action to occur, the electron population in state 3 must exceed that of state 2. This population inversion is achieved if the relaxation time τ32, for the transition from state 3 to state 2 exceeds the electron’s lifetime τ2 in state 2. The relaxation time between two states is largely controlled by the emission of optical phonons (optically active vibrational modes of the lattice) if the energy separating the states equals or exceeds the phonon energy. Increasing the state separation increases the relaxation time. To maximize the population inversion, the energy separating states 2 and 1 is designed to be equal to the phonon energy. That way, electrons in state 2 will quickly scatter into level 1 because of the resonant nature of the transition. Indeed, the calculated value for τ2 is about 0.3 picoseconds, significantly less than the 2.6 ps calculated for τ32.
To prevent accumulation of electrons in level 1, the exit barrier of the active region is made thin, which allows rapid tunneling into a miniband in the adjacent injector. The miniband allows the electrons to rapidly cross the injector and quickly relax into the ground state g. Electrons are then reinjected into the next active region.
The injector superlattice is also designed so that a minigap faces state 3, thus suppressing electron escape by tunneling. As a result, electron population builds up sufficiently to allow laser action at a reasonable current density, the so-called laser threshold. Injectors are intentionally n-type doped, while the active regions are generally undoped, to minimize unwanted broadening of the gain spectrum that would lead to large threshold currents.
This laser can be designed to emit at different wavelengths by appropriately choosing the thickness of the various layers. High-performance QC lasers have been built in this manner to emit wavelengths up to about 11 μm. 6,9
Optical-transition design
Jerome Faist’s group at the University of Neuchâtel in Switzerland has reported a new QC laser design that operates at record-high temperatures.
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The active region of their laser has four quantum wells and a double phonon resonance—that is, three energy levels equally separated by the energy of an optical phonon instead of the two levels discussed in
Carlo Sirtori and his group at Thales (formerly Thompson–CSF) have spearheaded the development of aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) heterostructure QC lasers. Last year they reported room-temperature operation of a laser emitting at 9.4 μm in pulsed mode. 11
For lasers emitting wavelengths longer than about 10 μm, active regions designed differently than described in
Several groups have been working on superlattice QC lasers. Erich Gornik and his group at the Technical University of Vienna have successfully built AlGaAs/GaAs superlattice QC lasers. Manijeh Razeghi and her collaborators at Northwestern University demonstrated high output power for AlInAs/GalnAs superlattice QC lasers emitting at a wavelength of 11 μm: They obtained more than 1 W peak power at room temperature. Alessandro Tredicucci and his collaborators at the Scuola Normale Superiore in Pisa, Italy, ran a superlattice QC laser at a wavelength of about 70 μm. This wavelength is greater than the 30-μm maximum wavelength obtained to date with lead-salt diode lasers. 1
Band-structure engineering offers the opportunity to design laser materials with properties not easily found in bulk semiconductors. We discuss two applications in
Earlier this year, our group at Lucent Technologies reported a new QC laser that emits a continuum of wavelengths from 6 to 8 μm, with comparable power at all wavelengths. 13 The design innovation that leads to the continuum generation is to make active regions in different stages have different quantum-well thicknesses. In spectroscopic applications, one can select individual wavelengths from the continuum with an external grating.
Superlattice Active Regions
The illustration below shows two stages of a superlattice quantum cascade (QC) laser designed to emit at a wavelength near 24 μm. Also depicted are the moduli squared of the relevant wavefunctions. The active-region superlattice comprises 10-nm-thick Ga0.53In0.47As quantum wells separated by 0.4-nm thick Al0.52In0.48As barriers. The laser transition is between delocalized electronic states belonging to minibands. For this laser the minibands have four states each: Superlattice designs for lasers emitting shorter wavelengths have a greater number of states. In the figure, the laser transition, symbolized by the red arrows, is between states labeled 2 and 1.
The superlattice design has several advantages, particularly for lasers emitting at long wavelengths. First, it’s easier to achieve the population inversion needed for laser action: The relaxation time of a state in a miniband is intrinsically shorter than the lifetime for transitions between minibands, so that the final state 1 depicted in the illustration is essentially empty of electrons. Second, the broad minibands allow one to achieve higher drive currents and hence higher powers for the same number of stages. Third, the alignment between the states of the injector and the active region is less critical, particularly at long wavelengths.
The flexibility of superlattice design makes it possible to do away with the injector region altogether. 18 Working with Albert Hutchinson and Michael Wanke, we constructed an injectorless QC laser emitting at a wavelength of 11.5 μm. By eliminating the need for injectors, we maximize the optical confinement factor, that is, the fraction of the light intensity overlapping the active-region-injector stack.
QC lasers emitting infrared wavelengths greater than about 17 μm don’t use conventional dielectric waveguides to confine light: Such waveguides would be prohibitively thick. Instead, they use metal–semiconductor waveguides in which the laser mode propagates along the metal–semiconductor interface with the intensity peaked at the interface. 5,6 In this way, much less material is used and the optical confinement factor approaches unity. At wavelengths shorter than 15 μm, significant optical losses occur, associated with the penetration of the radiation into the metal, and so conventional waveguides are used.
Narrow linewidth and high-speed operation
The linewidth of QC lasers is important from both a fundamental and an applied point of view. For structures of the type discussed in
QC lasers can potentially be directly modulated at much higher frequencies than can diode lasers, whose bandwidth is typically limited to about 20 GHz. 5 The reason is that the intrinsic response of the active regions to variations in the photon density in the cavity is limited by the electron lifetimes in the upper state. These electron lifetimes are comparable to the photon lifetime (the roundtrip time of light in the laser divided by the transmission coefficient of the laser facets), so intrinsic bandwidths ranging from a few hundred gigahertz to 1 THz should be possible. 5 The short intrinsic response time of the QC laser material makes these light sources particularly well suited for generating ultrashort mid-IR pulses. In recent experiments, our group has generated picosecond pulses in QC lasers emitting at 5 and 8 μm, with repetition rates on the order of 10 GHz. 5,6
Multiwavelength Quantum Cascade Lasers
The energy diagram at right depicts a portion of a quantum cascade (QC) laser designed to emit two substantially different wavelengths and also illustrates the moduli squared of the relevant wavefunctions. The two emitted wavelengths correspond to optical transitions between levels 4 and 1 (6.4 μm; blue wavy arrow) and levels 3 and 2 (7.9 μm; red wavy arrow). The energy separation between the upper states 4 and 3 is a critical parameter. It has to be big enough that the energy difference between the two emitted photons is considerably greater than the energy broadening of the optical transitions that generate the photons. A competing requirement is that the relaxation rate of electrons from state 4 to state 3 be small so that a sufficient population inversion can be realized between states 4 and 1. The two requirements are satisfied if the energy difference between the upper states is designed to be 19 meV, large compared to the energy broadening, but less than the phonon energy so as to hinder the rapid relaxation of electrons from state 4 to state 3.
At present, conventional semiconductor lasers can only operate in one applied voltage polarity. In contrast, QC lasers can be designed to emit different wavelengths under opposite bias voltages. Along with Albert Hutchinson and Alessandro Tredicucci, we reported such a laser in 1999: It emitted mid-infrared wavelengths of 6.3 μm or 6.5 μm, according to the direction of the bias. 12
The energy diagram for our laser is depicted below. Note that the electronic transition responsible for laser action connects two states with reduced spatial overlap, a so-called photon-assisted tunneling process. As a result, the upper state is long-lived. The lower state is short-lived due to the thin exit barrier. The large difference in lifetimes of the upper and lower states yields a substantial population inversion.
Electrons are injected into the structure from opposite directions, depending on the polarity. The structure itself lacks reflection symmetry. It is this lack of symmetry that allows the emitted photon energy to be different for opposite polarities.
Quantum cascade laser applications
The two wavelength regions (3-5 μm and 8-13 μm) in which the atmosphere is relatively transparent due to lack of water-vapor absorption are particularly important for chemical-sensing applications. These windows allow the measurement of traces of environmental and toxic gases or vapors that would otherwise be masked by a large atmospheric water-vapor background. Laser-based optical methods in trace-gas analysis and chemical sensing have a number of advantages, including their noninvasive nature, high sensitivity and selectivity, and real-time detection.
A variety of spectroscopic methods can determine the local concentration of a species with parts per billion in volume (ppbv) sensitivity. For example, in point sensing, a sample of air is introduced into a chamber in which laser light undergoes many reflections to increase its optical path. The large path length combined with direct-absorption spectroscopy or wavelength-modulation spectroscopy (in which the first or second derivatives of the spectrum are measured) allows one to determine the local concentration of a species with high accuracy and sensitivity.
Industrial uses of chemical sensing include combustion diagnostics in the power and automobile industries; medical diagnostics such as breath analysis for the early detection of ulcer, diabetes, colon cancer, and other diseases; and process control. Military and law enforcement applications include the detection of explosives, emissions from illicit drug production sites, and chemical and biological weapons of mass destruction. (QC lasers can also be used for such military countermeasures as blinding the IR sensor of a heat-seeking missile.) Atmospheric science uses spectral data in the mid-IR to determine chemical concentration profiles, which are important for the development of reliable global climate models.
Most of these applications require tunable singlemode mid-IR lasers with power levels sufficient to obtain a good signal-to-noise ratio. Commercial devices such as field point sensors also need to be portable, so they require compact, room-temperature battery-operated light sources. Existing mid-IR sources barely meet these requirements, but QC lasers readily satisfy them and have already been used in many trace-gas analyses. 6,8,9,15–17 In a typical spectroscopic measurement used in these analyses, the temperature of the laser is adjusted so that the emitted wavelength is initially positioned on the short-wavelength side of a particular absorption peak. Then the wavelength is repetitively scanned across the peak using a low frequency (100–10 000 Hz) current ramp.
Chris Webster and coworkers at the Jet Propulsion Laboratory flew one of our QC lasers aboard a NASA ER-2 high-altitude aircraft to measure trace concentrations of atmospheric gases including methane and nitrous oxide (N2O).
15
(See figure 2(a) for a photograph of the aircraft.) The cryogenically cooled laser operated near 8 μm in the DFB configuration. The air surrounding the NASA craft was sucked into a multipass gas cell aboard the plane over the course of eight-hour long flights. Then it was analyzed by derivative spectroscopy so as to map the vertical profile of trace gases. From September 1999 to March 2000, Webster and company took measurements of air over North America, Scandinavia, and Russia during a series of 20 flights achieving stratospheric altitudes as high as about 20 km. Methane data for one flight are graphed in figure

Methane Concentrations measured by NASA’s ER-2 high-altitude aircraft. (a) The craft in flight. The pod on the right wing houses the aircraft infrared laser spectrometer, which contains a quantum cascade laser. The payload also carries numerous other NASA, National Oceanic and Atmospheric Administration, and university experiments. (NASA photo courtesy of Tony Landis.) (b) Data for methane concentration (black) and altitude (blue) for a flight conducted on 11 March 2000. The eight-hour mission flew over Sweden and Russia. Evident on the plot are the ascent, cruise, dive, climb, and descent portions of the flight. The lower methane concentrations recorded during the latter one-third of the mission are characteristic of samples from the Arctic polar vortex into which air from higher altitudes has descended. For this flight, outside air temperatures were typically about 200 K during cruising segments, increasing to 270 K on descent. The temperature of the spectrometer’s gas sample cell was maintained constant at 280 K.
(Courtesy of Chris Webster, Jet Propulsion Laboratory.)

In 2001, Anatoliy Kosterev, Frank Tittel, and Robert Curl (Rice University) along with collaborators from Physical Sciences Inc (PSI) demonstrated the first application of a QC laser for continuous monitoring of carbon monoxide in ambient air. A typical day’s data are shown in figure 3. The Rice group measured CO concentrations using direct absorption spectroscopy over a path length of 1 m. The sensitivity they achieved, 12 ppbv, is much greater than that obtained with standard nonoptical methods and holds out promise for the commercial development of QC-laser–based CO sensors.

Carbon Monoxide Concentrations in ambient air, monitored with a gas sensor based on a thermoelectrically cooled quantum cascade laser. Provided by Physical Sciences Inc and Lucent Technologies, the laser operated in pulsed mode, emitting a wavelength of 4.6 μm in the distributed feedback configuration. Two characteristic maxima of CO concentration were observed over the course of a typical day in Houston, Texas. They are due to conditions prevailing during the morning and evening rush hours. Visible on the plot is most of the peak associated with the morning rush. The trailing portion of the evening-rush peak, though not the peak itself, is also evident. The measurements were performed at Rice University on 8 March 2001.
(Courtesy of A. Kosterev and F. Tittel, Rice University.)

The Rice group has pioneered trace-gas detection in open air with near–room temperature QC lasers, measuring concentrations near one part per million in volume (ppmv) for CH4 and HDO, and less than one ppbv for N2O. 16 PSI is developing QC-laser–based compact sensors for nitric oxide (NO) as well as for sulfur dioxide and sulfur trioxide, both important pollutant species emitted by aircraft engines. 8 They have achieved NO detection sensitivities in the lab of 55 ppbv. 17
Bill Weber’s group at the Ford Research Laboratory in Dearborn, Michigan, has used wavelength-modulated QC lasers from our group, combined with a multipass absorption cell, to measure concentrations of nitrogen oxides (NO x ), which are pollutants in vehicle exhaust. Certification of future ultralow-emission vehicles will require measurements of NO x concentrations at levels below 1 ppmv. Weber’s group measured concentrations of a few ppbv in diluted exhaust-gas bag samples collected during vehicle certification.
QC lasers may potentially be applied for optical wireless communications in the eye-safe atmospheric transmission windows at wavelengths of 3–5 μm and 8–13 μm. Losses associated with atmospheric light scattering at these wavelengths are many orders of magnitude lower than they are for visible light, particularly in conditions of poor visibility such as fog. Recently we used a QC laser emitting at 8.1 μm to transmit complex data (multimedia satellite channels comprising 800 television channels and 100 radio channels) over a distance of 200 m.
The authors wish to thank Mark Allen, James Baillargeon, Raffaele Colombelli, Robert Curl, Jerome Faist, John Hall, John Hartman, Albert Hutchinson, James Kelly, Anatoliy Kosterev, Rainer Martini, Tanya Myers, Roberto Paiella, Gaetano Scamarcio, Carlo Sirtori, David Sonnenfroh, Matthew Taubman, Frank Tittel, Alessandro Tredicucci, Michael Wanke, Christopher Webster, Edward Whittaker, Richard Williams, and Richard Zare for collaborations and discussions.
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More about the Authors
Federico Capassos (fc@bell-labs.com
Federico Capasso. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey, US .
Claire Gmachl. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey, US .
Deborah L. Sivco. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey, US .
Alfred Y. Cho. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey, US .