Probing Semiconductor‐Semiconductor Interfaces

JAN 01, 1987

Synchrotron radiation studies are shedding light on the theoretically complex regions between different semiconductors, bringing closer the goal of predicting band structures at the meV accuracies necessary for device applications.

DOI: 10.1063/1.881110

Robert S. Bauer

Giorgio Margaritondo

Almost every aspect of modern life is affected by a practical result of research in condensed matter physics: semiconductor devices. The performance of these solid‐state devices is determined largely by the physical properties of the interfaces within them. It is the properties of interfaces in rectifying metal‐semiconductor junctions, ohmic contacts, metal‐oxide‐semiconductor structures and p‐n junctions, for example, that determine the performance of such devices as infrared detectors, microwave amplifiers, computer processors and laser diodes, respectively.

References

1. R. L. Anderson, Solid State Electron. 5, 341 (1964). https://doi.org/SSELA5
C. Mailhiot, C. B. Duke, Phys. Rev. B 33, 1118 (1986).https://doi.org/PRBMDO
2. J. L. Freeouf, J. M. Woodall, Surf. Sci. 168, 518 (1986).https://doi.org/SUSCAS
3. W. A. Harrison, J. Vac. Sci. Technol. B 3, 1231 (1985).https://doi.org/JVTBD9
4. P. Vogl, H. P. Hjalmarson, J. D. Dow, J. Phys. Chem. Solids 44, 365 (1983).https://doi.org/JPCSAW
5. W. R. Frensley, H. Kroemer, Phys. Rev. B 16, 2642 (1977).https://doi.org/PLRBAQ
6. J. M. Langer, H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985). https://doi.org/PRLTAO
M. J. Caldas, A. Fazzio, A. Zunger, Appl. Phys. Lett. 45, 671 (1984).https://doi.org/APPLAB
7. M. L. Cohen, Adv. Electron. Electron Phys. 51, 1 (1980), and references therein.https://doi.org/AEEPAR
8. J. Tersoff, Phys. Rev. B 30, 4874 (1984). https://doi.org/PRBMDO
Y.‐C. Ruan, W. Y. Ching, J. Appl. Phys. 60, 4035 (1986).https://doi.org/JAPIAU
9. C. Tejedor, F. Flores, J. Phys. C 11, L19 (1978).https://doi.org/JPSOAW
10. E. O. Kane, Phys. Rev. B 33, 4428 (1986); https://doi.org/PRBMDO
E. O. Kane, J. Vac. Sci. Technol. B 4, 1051 (1986).https://doi.org/JVTBD9
11. A. Zur, T. C. McGill, J. Vac. Sci. Technol. B 2, 440 (1984).https://doi.org/JVTBD9
12. R. S. Bauer, J. C. McMenamin, J. Vac. Sci. Technol. 15, 1444 (1978).https://doi.org/JVSTAL
13. P. Perfetti, D. Denley, K. A. Mills, D. A. Shirley, Appl. Phys. Lett. 33, 66 (1978).https://doi.org/APPLAB
14. A. D. Katnani, G. Margaritondo, Phys. Rev. B 28, 1944 (1983); https://doi.org/PRBMDO
P. H. Mahowald, R. S. List, W. E. Spicer, J. Woicik, P. Pianetta, J. Vac. Sci. Technol. B 3, 1252 (1985); https://doi.org/JVTBD9
J. R. Waldrop, R. W. Grant, S. P. Kowalczyk, E. A. Kraut, J. Vac. Sci. Technol. A 3, 835 (1985); and references therein.https://doi.org/JVTAD6
15. P. Zurcher, R. S. Bauer, J. Vac. Sci. Technol. A 1, 695 (1983).https://doi.org/JVTAD6
16. F. Capasso, A. Y. Cho, K. Mohammed, P. W. Foy, Appl. Phys. Letters 46, 664 (1985).https://doi.org/APPLAB
17. R. S. Bauer, H. W. SangJr., Surf. Sci. 132, 479 (1983). https://doi.org/SUSCAS
D. W. Niles, G. Margaritondo, P. Perfetti, C. Quaresima, M. Capozi, Appl. Phys. Lett. 47, 1092 (1985). https://doi.org/APPLAB
F. J. Grunthaner, P. J. Grunthaner, M. H. Hecht, N. M. Johnson, Mater. Sci. Rep. 1, 1 (1986).https://doi.org/MSREEL
18. A. D. Katnani, P. Chiaradia, Y. Cho, P. Mahowald, P. Pianetta, R. S. Bauer, Phys. Rev. B 32, 4071 (1985).https://doi.org/PRBMDO

More about the Authors

Robert S. Bauer. Xerox Palo Alto Research Center, Palo Alto, California.

Giorgio Margaritondo. University of Wisconsin, Madison.