More on the solid‐state amplifier and Dr. Lilienfeld
DOI: 10.1063/1.3051613
In the February 1964 number of this journal, Virgil E. Bottom discusses three patents granted to the late J. E. Lilienfeld in the years 1930–1933 on a type of solid‐state amplifier invented by him in the latter half of the 1920’s. Attention is drawn by Dr. Bottom to similarity in operation of these amplifiers with that of the later transistor amplifiers. The reader is left with the conclusion that they are essentially the same, and with doubt as to whether the basic patents on the type‐A transistor or the p‐n Junction transistor were rightfully granted. Having familiarity with these Lilienfeld patents and having followed some of Dr. Lilienfeld’s other work, I may be able to add some constructive comments to the discussion.
References
1. J. Bardeen and W. H. Brattain, US patent 2 524 035, October 1950.
2. W. Shockley, US patent 2 569 347, September 25, 1951.
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A Unipolar Field Effect Transistor. US patent 2 744 970, May 8, 1956.4. G. L. Pearson, Phys. Rev. 90, 336, 1953, A High Impedance Silicon Field Effect Transistor.
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13. But see W. P. Dyke, Scientific American, January 1964, pp. 108–118, Advances in Field Emission.
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C. F. Eyring, S. S. Mackeown and R. A. Millikan, Phys. Rev. 31, 900–909, 1928, Field Currents from Points.15. R. H. Fowler and L. Nordheim, Proc. Roy. Soc. (London), 119, 173–181, 1928, Electron Emission in Intense Fields.
More about the Authors
J. B. Johnson. Bell Telephone Laboratories.