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Microscience: an overview

NOV 01, 1979
Science and technology are advancing together, each contributing to the other to produce ever smaller and more sophisticated structures and to permit investigation of new classes of phenomena.

DOI: 10.1063/1.2995274

James A. Krumhansl
Yoh‐Han Pao

Just about twenty years ago, at the Christmas, 1959, meeting of The American Physical Society at Cal Tech, Richard P. Feynman gave a delightful talk, “There’s Plenty of Room at the Bottom.” He said at first that he imagined that experimental physicists must often look with envy at men like Heike Kamerlingh Onnes, who opened the field of low temperatures, which seems to be bottomless—one can go down and down, or Percy Bridgman who, in designing a way to obtain high pressure, opened up another new field—in which one can go up and up. Attainment of ever higher vacuum, he said, was a continuing development of the same kind. He then went on to say that he wanted “to describe a field, in which little has been done, but in which an enormous amount can be done in principle.” This was the field of miniaturization, the problem of manipulating and controlling things on a small scale.

References

  1. 1. Transcript available in Miniaturization (H. Gilbert ed.) Reinhold, New York (1961); chapter 16.

  2. 2. G. Todd, H. Poppa, L. H. Veneklasen, Thin Solid Films 57, 213 (1979).https://doi.org/THSFAP

  3. 3. C. T. Hovland in VIIIth International Conference on X‐ray Optics and Microanalysis, Science Press, Princeton (1979).

  4. 4. A. Gopinath, K. G. Gopinathan, in VIIIth International Conference on X‐ray Optics and Microanalysis, Science Press, Princeton (1979).

  5. 5. D. C. Flanders, J. Vac. Sci. Technol., in press.

  6. 6. D. C. Flanders, A. M. Hawryluk, H. I. Smith, J. Vac. Sci. Technol., in press.

  7. 7. A. Ruoff, D. A. Nelson, Jr, Phys. Rev. Lett. 42, 383 (1979).https://doi.org/PRLTAO

  8. 8. W. A. Little, in Future Trends in Superconductive Electronics (B. S. Deaver et al. eds.), AIP Conference Proceedings 44 (1978); page 421.https://doi.org/APCPCS

  9. 9. M. W. Geis, D. C. Flanders, H. I. Smith, Appl. Phys. Lett. 35, 71 (1979).https://doi.org/APPLAB

  10. 10. R. Dingle, H. L. Stormer, A. C. Gossard, W. Wiegmann, Inst. Phys. Conf. Ser. 45 (1979); chapter 3.https://doi.org/IPHSAC

  11. 11. H. L. Stormer, R. Dingle, A. C. Gossard, W. Wiegmann, W. Sturge, Solid State Commun. 29, 705 (1979).https://doi.org/SSCOA4

  12. 12. D. J. Thouless, Phys. Rev. Lett. 39, 1167 (1977).https://doi.org/PRLTAO

  13. 13. N. Giardano, W. Gilson, D. E. Prober, Phys. Rev. Lett. 43, 725 (1979); https://doi.org/PRLTAO
    G. J. Dolan, D. D. Osherhoff, ibid., 721 (1979).

  14. 14. P. W. Anderson, E. Abrahams, T. V. Ramakrishnan, Phys. Rev. Lett. 43, 718 (1979).https://doi.org/PRLTAO

More about the Authors

James A. Krumhansl. Cornell University, Ithaca, N.Y..

Yoh‐Han Pao. Case Western Reserve University, Cleveland, Ohio.

This Content Appeared In
pt-cover_1979_11.jpeg

Volume 32, Number 11

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