Metal‐Semiconductor Interfaces

JAN 01, 1986

The mixing of atoms at boundaries produces regions with distinctive properties; the resulting combinations have a wide variety of uses—from smaller microelectronic devices to new, exotic composite materials.

DOI: 10.1063/1.881062

John H. Weaver

In my view of the evolution of solidstate physics, the 1970s were the decade of bulk phenomena. We made enormous strides in understanding crystals—we mapped their energy bands, developed clever computational schemes and became experimentally and theoretically adept at characterizing solid crystals. At the same time, we developed the tools to study surfaces, and we continue to make amazing progress in this area, as Shuk Y. Tong explained in a recent article (PHYSICS TODAY, August 1984, page 50).

References

1. For an exhaustive review of metal‐semiconductor interfaces, see L. J. Brillson, Surf. Sci. Rep. 2, 123 (1982).https://doi.org/SSREDI
2. See, for example, J. M. Poate, K. N. Tu, J. W. Mayer, eds., Thin Films—Interdiffusion and Reactions, Wiley, New York (1978);
G. Ottaviani, K. N. Tu, J. W. Mayer, Phys. Rev. B 24, 3354 (1981).https://doi.org/PRBMDO
3. The proceedings of a June 1985 conference in Marseilles, France, will appear in Surface Science in early 1986.
4. For a discussion of crystalline semiconductor heterojunctions, see V. Narayanamurti, PHYSICS TODAY, October 1984, p. 24.
5. J. H. Weaver, in Analysis and Characterization of Thin Films, K. N. Tu, R. Rosenberg, eds., Academic, New York (1986), in press.
6. See J. W. Matthews, ed., Epitaxial Growth, Academic, New York (1975).
7. M. Grioni, J. J. Joyce, S. A. Chambers, D. G. O’Neill, M. del Giudice, J. H. Weaver, Phys. Rev. Lett. 53, 2331 (1984); https://doi.org/PRLTAO
R. R. Daniels, A. D. Katnani, T.‐X. Zhao, G. Margaritondo, A. Zunger, Phys. Rev. Lett. 49, 895 (1982); https://doi.org/PRLTAO
M. del Giudice, J. J. Joyce, M. W. Ruckman, J. H. Weaver, Phys. Rev. B 32, 5149 (1985).https://doi.org/PRBMDO
8. A. Zunger, Phys. Rev. B 24, 4372 (1981).https://doi.org/PRBMDO
9. E. J. van Loenen, J. W. M. Frenken, J. F. van der Veen, Appl. Phys. Lett. 45, 41 (1984).https://doi.org/APPLAB
10. M. del Giudice, R. A. Butera, J. H. Weaver, to appear in Phys. Rev. B 33 (1986).https://doi.org/PRBMDO
11. R. T. Tung, J. M. Gibson, J. M. Poate, Phys. Rev. Lett. 50, 429 (1983).https://doi.org/PRLTAO
12. E. J. van Loenen, J. W. M. Frenken, J. F. van der Veen, S. Valeri, Phys. Rev. Lett. 54, 827 (1985).https://doi.org/PRLTAO
13. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, J. Vac. Sci. Technol. 17, 1019 (1980).https://doi.org/JVSTAL
14. R. T. Tung, Phys. Rev. Lett. 52, 461 (1984).https://doi.org/PRLTAO
15. M. Liehr, P. E. Schmid, F. K. LeGoues, P. S. Ho, Phys. Rev. Lett. 54, 2139 (1985).https://doi.org/PRLTAO
16. J. C. Hensel, R. T. Tung, J. M. Poate, F. C. Unterwald, Phys. Rev. Lett. 54, 1840 (1985); https://doi.org/PRLTAO
J. C. Hensel, R. T. Tung, J. M. Poate, F. C. Unterwald, Appl. Phys. Lett. 47, 151 (1985).https://doi.org/APPLAB

More about the Authors

John H. Weaver. University of Minnesota, Minneapolis.