John Bardeen and the Point‐Contact Transistor
DOI: 10.1063/1.881336
To this day it is not well understood that the bipolar transistor began with John Bardeen and Walter H. Brattain’s point‐contact transistor. The invention of the point‐contact transistor was a momentous event, not only in itself but even more because of the unimaginable revolution in electronics that followed. This revolution, which continues unabated, had a beginning: Bardeen’s recognition of minority‐carrier injection—that is, his realization that an applied voltage causes valence band holes from the surface region of an n‐type semiconductor material near a metal contact to be injected into the bulk of the material. This realization made the semiconductor suddenly important and no longer just an interesting material to study.
References
1. J. Bardeen, W. H. Brattain, Phys. Rev. 74, 230 (1948). https://doi.org/PHRVAO
J. Bardeen, W. H. Brattain, US patent 2 524 035, filed 17 June 1948.2. J. Bardeen, Optoelectron. Devices Technol. 2, 124 (1987).
3. J. Bardeen, Phys. Rev. 71, 717 (1947).https://doi.org/PHRVAO
4. P. W. Anderson, Nature 349, 652 (1991).https://doi.org/NATUAS
5. G. Gilder, Microcosm: The Quantum Revolution in Economics and Technology, Simon and Schuster, New York (1989).
6. J. L. Moll, M. Tanenbaum, J. M. Goldey, N. Holonyak, Proc. IRE 44, 1174 (1956).https://doi.org/PIREAE
7. J. Bardeen, “Trends in Semiconductor Research,” unpublished talk given at Semiconductor Specialists Dinner, Chicago, 31 January 1963.
8. N. HolonyakJr, IEEE J. Quantum Electron. 23, 684 (1987).https://doi.org/IEJQA7
9. N. HolonyakJr, Optoelectron. Devices Technol. 2, 368 (1987).
10. R. N. Hall, Proc. IEEE 52, 91 (1964).https://doi.org/IEEPAD
11. W. D. Laidig, N. HolonyakJr, M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, J. Bardeen, Appl. Phys. Lett. 38, 776 (1981).https://doi.org/APPLAB
More about the Authors
Nick Holonyak. University of Illinois, Urbana‐Champaign.