High‐resolution systems for microfabrication
DOI: 10.1063/1.2995276
Extensive work on the fabrication of thin‐film microstructures began in the early 1960’s when it became apparent that thousands or even millions of circuits could potentially be integrated into a single piece of silicon less than a centimeter on a side. In the years since, the potential has been realized, as one can see from figure 1, and has produced the well‐known dramatic growth of the microelectronics industry. The same technologies that make large‐scale integrated circuits possible also make possible a variety of other devices of scientific and technological interest, including magnetic bubble devices, high‐speed computer switching circuits based on the Josephson effect, surface acoustic‐wave devices, integrated optical circuits, Josephson microbridges and zone‐plate lenses for focusing soft x rays.
References
1. B. J. Lin, J. Vac. Sci. Technol. 12, 1317 (1975).https://doi.org/JVSTAL
2. D. C. Flanders, H. I. Smith, S. Austin, Appl. Phys. Lett. 31, 426 (1977).https://doi.org/APPLAB
3. D. L. Spears, H. I. Smith, Electron. Lett. 8, 102 (1972).https://doi.org/ELLEAK
4. E. Spiller, R. Feder, J. Topalian, J. de Physique 39, No. C4/7, 205 (1978).https://doi.org/JOPQAG
5. R. Feder, E. Spiller, J. Topalian, A. N. Broers, W. Gudat, B. J. Panessa, J. Sedat, Science 197, 259 (1977).https://doi.org/SCIEAS
6. J. Wilczynski, J. Vac. Sci. Technol., in press.
7. D. A. Markle, Solid State Technol., 50 (June 1974).
8. M. C. King, IEEE Trans. Electron Devices, ED‐26, 711 (1979).https://doi.org/IETDAI
9. H. N. Yu, A. Reisman, C. M. Osburn, D. L. Critchlow, T. H. P. Chang, IEEE Trans. Electron Devices ED‐26, 318 (1979).https://doi.org/IETDAI
10. T. H. P. Chang, A. D. Wilson, A. J. Speth, C. H. Ting, in Proc. 7th Int. Symp. on Electron and Ion Beam Sciences and Technol., R. Bakish, ed., Electrochem. Soc., Princeton (1976), page 377.
11. D. R. Herriott, R. J. Collier, D. S. Alles, J. W. Stafford, IEEE Trans. Electron Devices ED‐22, 385 (1975).https://doi.org/IETDAI
12. H. C. Pfeifter, IEEE Trans. Electron Devices ED‐26, 663, (1979).https://doi.org/IETDAI
13. H. S. Yourke, E. B. Weber, Proc. Int. Conf. Electron Devices, Washington D.C., IEEE, New York (1976), page 431.
14. I. Haller, M. Hatzakis, R. Srinivasan, IBM Journ. Res. Dev. 12, 251 (1968).https://doi.org/IBMJAE
15. A. N. Broers, W. Molzen, J. Cuomo, N. Wittels, Appl. Phys. Lett. 15, 98 (1976); https://doi.org/APPLAB
H. P. Zingsheim in Scanning Electron Microscopy, O. Johari, ed., IITRI, Chicago (1977), page 357.16. R. L. Laibowitz, A. N. Broers, J. T. C. Yeh, J. M. Viggiano, Appl. Phys. Lett., in press.
17. J. H. Orloff, L. W. Swanson, J. Vac. Sci. Technol. 12, 1209 (1975).https://doi.org/JVSTAL
18. H. R. Clampitt, K. L. Aitken, D. K. Jefferies, J. Vac. Sci. Technol. 12, 1208 (1975).https://doi.org/JVSTAL
19. R. L. Seliger, J. W. Ward, V. Wang, R. L. Kuhena, Appl. Phys. Lett. 34, 310 (1979).https://doi.org/APPLAB
More about the Authors
Alec N. Broers. I.B.M. Thomas J. Watson Research Center.