Crystalline semiconductor heterostructures

OCT 01, 1984

Research with materials made from atomically thin layers of semiconductors has yielded a unique discovery, the fractional Hall effect, as well as truly novel devices in electronics and photonics.

DOI: 10.1063/1.2915912

Venkatesh Narayanamurti

The great advances in solid‐state electronics can be traced to a unique combination of basic conceptual advances, the perfection of new materials and the development of new device principles. Ever since the invention of the transistor at Bell Laboratories almost forty years ago, we have witnessed a spectacular growth in silicon technology, leading to increasingly higher densities of devices and more complex functions. Almost as revolutionary as the invention of the transistor in 1947 was the invention of the laser a decade later. Thus, nearly concurrent with the electronics revolution, we have seen another technological revolution, the so‐called photonics revolution: using beams of laser light for information transmission. The lasers that provide light for today’s lightwave communication systems are made not from silicon but from compound semiconductors. These are generally compounds of elements from group III of the periodic table, such as Ga, Al and In, along with elements from group V, most notably As, P and Sb.

References

1. See for example, H. C. Casey Jr, M. B. Panish ed. Heterostructure Lasers, Academic, New York (1978).
2. For an early review see A. Y. Cho, J. R. Arthur, Prog. Sol. St. Chem. 10, 157 (1975).https://doi.org/PSSTAW
3. P. D. Dapkus, Ann. Rev. Mat. Sci. 12, 243 (1982).https://doi.org/ARMSCX
4. L. L. Chang, L. Esaki in Molecular Beam Epitaxy, Brian R. Pamplin, ed., Pergamon, Oxford, (1980), p. 15.
5. R. Dingle in Festkörperprobleme, H. J. Queisser, ed. Pergamon, Oxford (1975) vol. XV, p. 21.
6. A. Y. Cho, Thin Solid Films 100, 291 (1983).https://doi.org/THSFAP
7. R. Dingle, A. C. Gossard, H. L. Störmer, US Patent 4 163 237, filed April 24, 1978, issued July 31, 1979.
For a review see H. L. Störmer, Surf. Sci. 132, 519 (1983).https://doi.org/SUSCAS
8. A. C. Gossard, Inst. Phys. Conf., Ser. No. 69 pub, E. H. Roderick, Institute of Physics (Bristol), p. 1 (1983).
9. S. S. Pei, N. J. Shah, R. H. Hendel, C. W. Tu, R. Dingle, in Proceedings of 1984 GaAs IC Conference (to be published).
10. For a recent review, see H. L. Störmer, in Festkörperprobleme (Advances in Solid State Phys.), ed. P. Grosse, vol. XXIV, p. 25, Vieheg, Braunschweig(1984).
11. R. C. Miller, D. A. Kleinman, A. C. Gossard, Phys. Rev. B 29 (1984), to be published.https://doi.org/PRBMDO
12. F. C. Capasso, W. T. Tsang, G. Williams, in IEEE Trans. on Electron Devices, ED‐30, 381 (1983).
13. W. T. Tsang, Electron. Lett. 18, 845 (1982).https://doi.org/ELLEAK
14. For a review, see S. D. Hersee, M. Razeghi, R. Blondeau, M. Krakowski, B. de Cremoux, J. P. Duchemin, IEDM Tech. Digest, p. 288 (1983).
15. W. T. Tsang, Appl. Phys. Lett. 39, 786 (1981).https://doi.org/APPLAB
16. N. Holonoyak, R. M. Kolbas, R. D. Dupuis, P. D. Dapkus, IEEE J. Quant. Elec. QE‐16, 170 (1980).
17. H. Temkin, K. Alavi, W. R. Wagner, T. P. Pearsall, A. Y. Cho, Appl. Phys. Lett. 42, 845 (1983).https://doi.org/APPLAB
18. J. W. Matthews, A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974); https://doi.org/JCRGAE
J. W. Matthews, A. E. Blakeslee, 32, 265 (1976).
19. G. C. Osbourn, J. Vac. Sci. Technol. 21, 469 (1982).https://doi.org/JVSTAL
20. J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, I. K. Robinson, J. Vac. Sci. Technol. A2, 436 (1984).
21. J. M. Gibson, R. T. Tung, J. M. Phillips, J. M. Poate in Mat. Res. Soc. Proc., Series 25, G. Baglin, ed., p. 405 (1984).

More about the Authors

Venkatesh Narayanamurti. AT&T Bell Laboratories, Murray Hill, New Jersey.